PART |
Description |
Maker |
K7N403601B K7N403601B-QC13 K7N403609B-QC20 K7N4018 |
128Kx36 & 256Kx18 Pipelined NtRAMTM 256 Megabit, 3.0 Volt-only Page Mode Flash Memory 128Kx36 & 256Kx18 Pipelined NtRAM 128K × 36
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
EUP2796JIR1 EUP2796 |
32Mb, 1M x 32, 3.0Volt Boot Block FLASH Array, Multi-Chip Module (MCM) 双显示器白光LED驱动3/2X开关电容升 512K x 32, 5V, MCM, Even-Sectored 双显示器白光LED驱动3/2X开关电容升 Dual-Display White LED Driver with 3/2X Switched Capacitor Boost
|
Eutech Microelectronics, Inc. 德信科技股份有限公司 Eutech Microelectronics Inc
|
M1T1HT18PZ32E |
High Speed Pipelined 1-Mbit (32Kx32) Standard 1T-SRAM?? Embedded Memory Macro High Speed Pipelined 1-Mbit (32Kx32) Standard 1T-SRAM Embedded Memory Macro 高速流水线 - Mbit2Kx32)标准的1T - SRAM??嵌入式内存宏
|
List of Unclassifed Manufacturers ETC Electronic Theatre Controls, Inc.
|
CY7C1303AV25-100BZC CY7C1306AV25-100BZC CY7C1303AV |
Memory : Sync SRAMs 18-Mb Burst of 2 Pipelined SRAM with QDR(TM) Architecture 18-Mb Burst of 2 Pipelined SRAM with QDR⑩ Architecture 18-Mb Burst of 2 Pipelined SRAM with QDR Architecture 18-Mb Burst of 2 Pipelined SRAM with QDR?/a> Architecture
|
Cypress Semiconductor
|
LCL2103A-L |
MCM LNA
|
RFHIC
|
LCL2302-L LCL2702-L |
MCM LNA
|
RFHIC
|
5962-01533 UT8Q512K32-SWC 8Q512K32 UT8Q512K32 UT8Q |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)). 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). 16Megabit SRAM MCM 16Megabit的SRAM亿立方米 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose none 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none. 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).
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Aeroflex Circuit Techno... http:// AEROFLEX[Aeroflex Circuit Technology] Aeroflex Inc. Aeroflex, Inc.
|
79C0408RT4FK-20 79C0408 79C0408RPFE-12 79C0408RPFE |
4 Megabit (512k x 8-bit) EEPROM MCM
|
MAXWELL[Maxwell Technologies]
|
79C0832 79C0832RPQE-15 79C0832RPQE-20 79C0832RPQH- |
8 Megabit (256K x 32-Bit) EEPROM MCM
|
Maxwell Technologies ETC[ETC]
|
IC61S6432-8TQI IC61S6432 IC61S6432-117PQ IC61S6432 |
100MHz; 3.3V; 64K x 32 synchronous pipelined static RAM SYNCHRONOUS STATIC RAM, Pipelined Synchronous SRAM 64K x 32 SYNCHRONOUS PIPELINE STATIC RAM From old datasheet system 200MHz; 3.3V; 64K x 32 synchronous pipelined static RAM 75MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
|
ICSI[Integrated Circuit Solution Inc]
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